?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt april 2013 absolute maximum ratings symbol description ratings unit v ces collector to emitter voltage 360 v v ges gate to emitter voltage ? 30 v i c pulse(1)* pulsed collector current @ t c = 25 o c 220 a p d maximum power dissipation @ t c = 25 o c 28.4 w maximum power dissipation @ t c = 100 o c 11.4 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 4.4 o c/ w r ? ja thermal resistance, junction to ambient - 62.5 o c/ w notes: (1) half sine wave, d < 0.01, pluse width < 1 ? sec * ic_pluse limited by max tj FGPF4536 360 v pdp trench igbt features ? high current capability ? low saturation voltage: v ce (sat) =1.59 v @ i c = 50 a ? high input impedance ? fast switching ? rohs compliant applications ? pdp tv, consumer appliances, lighting general description to-220f (retractable) g e c using novel trench igbt technology, fairchild ? ?s new series of trench igbts offer the optimum performance for consumer appliances, pdp tv and lighting applications where low con - duction and switching losses are essential.
?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt package marking and ordering information device marking device package packaging type qty per tube max qty per box FGPF4536 FGPF4536tu to-220f tube 50ea - electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 360 - - v ?bv ces ?t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a - 0.4 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 100 ?a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ?a, v ce = v ge 2.4 3.3 4.0 v v ce(sat) collector to emitter saturation voltage i c = 20 a , v ge = 15 v - 1.19 - v i c = 30 a , v ge = 15 v - 1.33 - v i c = 50 a , v ge = 15 v, t c = 25 o c - 1.59 1.8 v i c = 50 a , v ge = 15 v, t c = 125 o c - 1.66 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1mhz - 1295 - pf c oes output capacitance - 56 - pf c res reverse transfer capacitance - 43 - pf switching characteristics t d(on) turn-on delay time v cc = 200 v, i c = 20 a, r g = 5 ? , v ge = 15 v, resistive load, t c = 25 o c - 5 - ns t r rise time - 20 - ns t d(off) turn-off delay time - 41 - ns t f fall time - 182 - ns t d(on) turn-on delay time v cc = 200 v, i c = 20 a, r g = 5 ? , v ge = 15 v, resistive load, t c = 125 o c - 4.6 - ns t r rise time - 21 - ns t d(off) turn-off delay time - 43 - ns t f fall time - 249 - ns q g total gate charge v ce = 200 v , i c = 20 a, v ge = 15 v - 47 - nc q ge gate to emitter charge - 5.4 - nc q gc gate to collector charge - 15 - nc
?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level
?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resistance
?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics
?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt typical performance characteristics figure 18.transient thermal impedance of igbt t 1 p dm t 2
?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FGPF4536 rev. c0 FGPF4536 360 v pdp trench igbt dimensions in millimeters package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2700v
FGPF4536 360 v pdp trench igbt www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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?2010 fairchild semiconductor corporation FGPF4536 rev. c0
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